mono crystal by 6 teperature sections, our power supply with 6 modules; poly crystal by 9 teperature setctions, our power supply with 9 modules. Each module with Independent and accurate control.
The output of the circuit breaker QF1 is connected to the primary side of the three-phase transformer. The transformer transforms the input supply voltage into a low voltage range suitable for crystal growth, and at the same time, electromagnetically couples out multiple sets of outputs to satisfy the multistage structure of the crystal growth furnace. For mono-crystal growth furnaces, the transformer's secondary output uses 6 independent power conditioning modules (PRMs) to heat the crystals in the growth furnace, due to the 6-stage structure, and for the polycrystalline synthesis furnace, because the furnace has a 9-stage structure, the transformer secondary output uses 9 sets of independent power conditioning modules to heat the crystal load in the synthesis furnace. The single-closed-loop (temperature closed loop) or double closed loop (current inner loop, temperature outer loop) controls and adjusts the duty cycle of the power semiconductor devices in each power conditioning module, thereby changing the output power of the power conditioning module, so that the various sections of the furnace body's temperature reaches the process requirements for crystal growth.
In short, mono crystal by 6 teperature sections, our power supply with 6 modules;
poly crystal by 9 teperature setctions, our power supply with 9 modules.
Each module with Independent and accurate control.
GaAs Gallium Arsenide Introduction
As the second generation of semiconductor, GaAs crystal is known as "Semiconductor Noble", is widely used in remote controllers, mobilephones, computer peripherals, lighting optoelectronic fields etc.. Due to its electron mobility is 6 times higher than silicon, GaAs has become a necessity for ultra high speed, ultra high frequency devices and integrated circuits. It is also widely used in military field, and is an important material for laser missiles.
GaAs Gallium Arsenide Power Supply Parameters
3 phase 220V, 380V,480V, 600V(+-10%) AC input,50Hz/60Hz
DC output 12KW for 6 Temperature sections; 18KW for 9 temperature sections.
Regulation range: 0-100%
constant current /constant voltage mode
Cooling mode:Force Air Cooling
With protection of overload, over heat, over current and low voltage, short circuit etc.
16000m2 for headquater, workshops and office.
capacity 1000 sets/month
5S management for production,
QC rather reliable.
Our Mono Crystal 6 Temperature Sections GaAs Gallium Arsenide Power Supply in Mass Production,
Now 350 sets in production.
TUVus, same as UL 1564;
High Technique Company;
We have exported to more than 40 countries, with agents in more than 10 countries.
If you are our distributor, your contact could be displayed on our website for marketing together.
No matter you are end customer or distributor, full support to you.
360 degree service
Just 1 call or email, all time available at our side.
Whatsapp:+86 185 0098 3665
Looking for GaAs Gallium Arsenide Power Supply Mass Production UL CE CSA? Green Power Technology is one of the professional manufacturers and suppliers. We have been dedicated to this field for over 20 years and already exported products to India, USA, Germany, etc. Equipped with a productive factory, we warmly welcome you to buy our high quality products made in China at competitive price or try our customized service.