Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgapsemiconductor with a Zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others.
GaAs can be used for various transistor types: MESFET, HEMT (a type of FET), JFET, Heterojunction bipolar transistor (HBT), Solar cells and detectors, Light-emission devices, Fiber optic temperature measurement, Spin-charge converters etc.
As the second generation of semiconductor, GaAs Gallium Arsenide crystal is known as "Semiconductor Noble", is widely used in remote controllers, mobilephones, computer peripherals, lighting etc. optoelectronic fields. Due to its electron mobility is 6 times higher than silicon, GaAs has become a necessity for ultra high speed, ultra high frequency devices and integrated circuits. It is also widely used in military field, and is an important material for laser missiles.
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